No. 2
Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE)
Location
- Cleanroom, 3rd Floor, Building 7 (Shared Core Facility for Research and Training)
Specifications
-
ICP source, supports 6-inch wafers, temperature control from -10℃ to 200℃, cylinder type for 6-inch wafers, forced air or water cooling
Description
- A system that selectively removes unwanted thin film areas based on circuit patterns formed on semiconductor wafers
Applications
- Used in etching processes for semiconductors, displays, MEMS (Micro-Electro-Mechanical Systems), and LED manufacturing